High pressure oxidation: One of the problems with the high temperatures used in oxidation process is that the dopants already present in the wafer will diffuse.  Besides defects such as dislocations are also likely to be more at higher temperatures. However, if oxidation is done at higher pressure (i.e. higher concentration), then the same growth rate may be obtained at lower temperature and/or time. If the pressure is increased to about 25 atm, then the temperature can be reduced by 300 to 750 ◦C.